Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
Identifieur interne : 010669 ( Main/Repository ); précédent : 010668; suivant : 010670Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy
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Abstract
Compliant structures have been elaborated so that a thin GaAs layer (thickness about 10 nm) was bonded on top of a GaAs substrate with a large twist angle (about 45°). The mechanical behaviour of such a compliant substructure was investigated by nanoindentation and the results were compared to those obtained on standard bulk substrates. A so-called free-standing behaviour was observed under low load (<0.25 mN). Above an enhancement of the plastic flow was determined. The morphology of relaxed InGaAs heteroepitaxial layer grown in the same conditions on standard and compliant substrates was then compared. We observed a strong decrease of the threading dislocations density in the alloy grown on the compliant substrates that correlates very well with the mechanical behaviour measured on compliant substrates.
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Le Bourhis</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Université de Poitiers,Laboratoire de Métallurgie Physique, UMR 6630 CNRS, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P., 30179</s1><s2>86962 Futuroscope-Chasseneuil</s2><s3>FRA</s3><sZ>2 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Poitou-Charentes</region><settlement type="city">Futuroscope-Chasseneuil</settlement></placeName><orgName type="university">Université de Poitiers</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0340388</idno><date when="2001">2001</date><idno type="stanalyst">PASCAL 01-0340388 INIST</idno><idno type="RBID">Pascal:01-0340388</idno><idno type="wicri:Area/Main/Corpus">010B86</idno><idno type="wicri:Area/Main/Repository">010669</idno></publicationStmt><seriesStmt><idno type="ISSN">0169-4332</idno><title level="j" type="abbreviated">Appl. surf. sci.</title><title level="j" type="main">Applied surface science</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Chemical beam epitaxy</term><term>Dislocation density</term><term>Gallium arsenides</term><term>Growth mechanism</term><term>Hardness indentation</term><term>Heteroepitaxy</term><term>II-V semiconductors</term><term>Indium arsenides</term><term>Plastic deformation</term><term>Solid-solid interfaces</term><term>Stress relaxation</term><term>TEM</term><term>Ternary compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Hétéroépitaxie</term><term>Epitaxie jet chimique</term><term>Semiconducteur II-V</term><term>Composé ternaire</term><term>Indium arséniure</term><term>Gallium arséniure</term><term>Mécanisme croissance</term><term>Interface solide solide</term><term>Relaxation contrainte</term><term>Déformation plastique</term><term>Densité dislocation</term><term>Empreinte dureté</term><term>TEM</term><term>In(1-x)Ga(x)As</term><term>As Ga In</term><term>8115H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Compliant structures have been elaborated so that a thin GaAs layer (thickness about 10 nm) was bonded on top of a GaAs substrate with a large twist angle (about 45°). The mechanical behaviour of such a compliant substructure was investigated by nanoindentation and the results were compared to those obtained on standard bulk substrates. A so-called free-standing behaviour was observed under low load (<0.25 mN). Above an enhancement of the plastic flow was determined. The morphology of relaxed InGaAs heteroepitaxial layer grown in the same conditions on standard and compliant substrates was then compared. We observed a strong decrease of the threading dislocations density in the alloy grown on the compliant substrates that correlates very well with the mechanical behaviour measured on compliant substrates.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0169-4332</s0></fA01><fA03 i2="1"><s0>Appl. surf. sci.</s0></fA03><fA05><s2>178</s2></fA05><fA06><s2>1-4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Twist-bonded compliant substrates for III-V semiconductors heteroepitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>PATRIARCHE (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>LE BOURHIS (E.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, 196 Av Henri Ravera, B.P. 29</s1><s2>92222 Bagneux</s2><s3>FRA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Université de Poitiers,Laboratoire de Métallurgie Physique, UMR 6630 CNRS, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P., 30179</s1><s2>86962 Futuroscope-Chasseneuil</s2><s3>FRA</s3><sZ>2 aut.</sZ></fA14><fA20><s1>134-139</s1></fA20><fA21><s1>2001</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>16002</s2><s5>354000098395570160</s5></fA43><fA44><s0>0000</s0><s1>© 2001 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>12 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>01-0340388</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied surface science</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Compliant structures have been elaborated so that a thin GaAs layer (thickness about 10 nm) was bonded on top of a GaAs substrate with a large twist angle (about 45°). The mechanical behaviour of such a compliant substructure was investigated by nanoindentation and the results were compared to those obtained on standard bulk substrates. A so-called free-standing behaviour was observed under low load (<0.25 mN). Above an enhancement of the plastic flow was determined. The morphology of relaxed InGaAs heteroepitaxial layer grown in the same conditions on standard and compliant substrates was then compared. 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